(China (Mainland))
Product Summary
The IXGN200N60B is a HiPerFASTTM IGBT.
Parametrics
IXGN200N60B absolute maximum ratings: (1)VCES TJ = 25℃ to 150℃: 600 V; (2)VCGR TJ = 25℃ to 150℃; RGE = 1 MΩ: 600 V; (3)VGES Continuous: ±20 V; (4)VGEM Transient: ±30 V; (5)IC25 TC = 25℃: 200 A; (6)IC90 TC = 90℃: 120 A; (7)ICM TC = 25℃, 1 ms: 400 A.
Features
IXGN200N60B features: (1)International standard package miniBLOC; (2)Aluminium nitride isolation, high power dissipation; (3)Isolation voltage 3000 V; (4)Very high current, fast switching IGBT; (5)Low VCE(sat) for minimum on-state conduction losses; (6)MOS Gate turn-on drive simplicity; (7)Low collector-to-case capacitance(< 50 pF); (8)Low package inductance (< 5 nH) easy to drive and to protect.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXGN200N60B |
Ixys |
IGBT Transistors 200 Amps 600V 2.1 V Rds |
Data Sheet |
Negotiable |
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IXGN200N60B3 |
Ixys |
IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A |
Data Sheet |
Negotiable |
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