Product Summary

The IS41C16105-50K is the 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16105-50K ideal for use in 16-, 32-bit wide data bus systems. The IS41C16105-50K is packaged in a 42-pin 400-mil SOJ and 400-mil 44- (50-) pin TSOP (Type II).

Parametrics

IS41C16105-50K absolute maximum ratings: (1)Voltage on Any Pin Relative to GND 5V, –1.0 to +7.0 V; 3.3V, –0.5 to +4.6 V; (2)Supply Voltage: 5V, –1.0 to +7.0 V; 3.3V, –0.5 to +4.6 V; (3)Output Current: 50 mA; (4)Power Dissipation: 1 W; (5)Commercial Operation Temperature: 0 to +70℃; (6)Extended Temperature:–30 to +85℃; (7)Industrail Temperature: –40 to +85℃; (8)Storage Temperature: –55 to +125℃.

Features

IS41C16105-50K features: (1)TTL compatible inputs and outputs; tristate I/O; (2)Refresh Interval: 1,024 cycles/16 ms; (3)Single power supply: 5V ± 10% (IS41C16105); (4)JEDEC standard pinout; (5)Byte Write and Byte Read operation via two CAS; (6)Extended Temperature Range: -30 to 85℃; (7)Industrail Temperature Range: -40 to 85℃.

Diagrams

IS41C16105-50K block diagram

IS41C16100
IS41C16100

Other


Data Sheet

Negotiable 
IS41C16100S
IS41C16100S

Other


Data Sheet

Negotiable 
IS41C16105
IS41C16105

Other


Data Sheet

Negotiable 
IS41C16128
IS41C16128

Other


Data Sheet

Negotiable 
IS41C16256
IS41C16256

Other


Data Sheet

Negotiable 
IS41C16256C-35TLI
IS41C16256C-35TLI

ISSI

DRAM 4M, 5V, EDO DRAM 35ns, 40 pin TSOP II

Data Sheet

0-270: $2.47
270-540: $2.32
540-1080: $2.22
1080-2565: $2.15