(China (Mainland))
Product Summary
The 2SD797 is a isc silicon NPN power transistor, which is characterized by high power dissipation, high current capability, collector-emitter breakdown voltage: v(br)ceo= 80v (min) and so on. This device is widely used in high power amplifier, high Power switching, DC-DC converter and more. Its collector-base voltage is up to 100V.
Parametrics
Maximum ratings: (1)collector-base voltage, VCBO:100V; (2)collector-emitter voltage, VCEO: 80V; (3)emitter-base voltage, VEBO:7v; (4)collector current, IC:30A; (5)base current, IB:8A; (6)collector power dissipation, Pc:200w; (7)junction temperature,Tj:175℃ ; (8)storage tempereture range, Tstg:-65 to 175℃.
Features
Features: (1)High Power Dissipation:PC=200W(Tc=25℃); (2)High Current Capability:IC=30A.
Diagrams
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 2SD797 |
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Negotiable |
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